Light emitting diode, method for preparing the same, and display device

ABSTRACT

The present disclosure provides a light emitting diode, a method of preparing the same, and a display device. The light emitting diode includes an anode, a quantum dot light emitting layer, an electron transport layer, a cathode, and a transition layer located between the electron transport layer and the cathode, the cathode including a transparent conductive oxide material, and a material of the transition layer having a work function WF between an LUMO of a material of the electron transport layer and a work function WF of a material of the cathode.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. application Ser. No.16/630,595 filed on Jan. 13, 2020, which is the U.S. national phase ofPCT Application No. PCT/CN2019/094260 filed on Jul. 1, 2019, whichclaims priority to Chinese Patent Application No. 201810706678.X filedon Jul. 2, 2018, which are incorporated herein by reference in theirentireties.

TECHNICAL FIELD

The present disclosure relates to the field of display technology, inparticular, to a light emitting diode, a method for preparing the same,and a display device including the same.

BACKGROUND

In current social life, people's demand on display devices goes higherand higher. Although the active matrix organic light emitting diode(AMOLED) display technology is called the next-generation new displaytechnology, AMOLED at present is mainly prepared by mask evaporationmethod due to factors such as the service life, while the preparationmethod faces issues, such as high technical difficulty, difficulty inmass production, low product yield, and high commodity price.

SUMMARY

In an aspect, an embodiment of the present disclosure provides a lightemitting diode, which includes an anode, a light emitting layer, anelectron transport layer, a cathode, and a metal transition layerlocated between the electron transport layer and the cathode, in whichthe cathode includes a transparent conductive oxide material, and amaterial of the metal transition layer has a work function W_(F) betweenan LUMO of a material of the electron transport layer and a workfunction W_(F) of a material of the cathode.

Optionally, the metal transition layer is in contact with the cathode,and a surface of the metal transition layer in contact with the cathodehas a roughness Rms greater than 1.0 nm, in which the roughness is aroughness measured in an AFM photograph and expressed in a calculatedroot mean square.

Optionally, a surface of the metal transition layer in contact with thecathode has a roughness of 1.0 nm to 5.0 nm.

Optionally, the metal transition layer is made of at least one metal ofmetals Al, In, Ag, and Sn.

Optionally, the metal transition layer is made of metal Sn, Sn—Al orSn—Ag alloy.

Optionally, the metal transition layer is made of a mixed material ofmetal tin and an oxide of tin.

Optionally, the metal tin has a molar ratio of 50% or more in the mixedmaterial.

Optionally, the metal transition layer has a thickness of 0.5 nm to 15nm.

Optionally, a surface of the metal transition layer in contact with thecathode has a discontinuous island profile, and the island profile has aprotruding height less than or equal to 10 nm.

In another aspect, the present disclosure provides a display deviceincluding the light emitting diode of any of the above items.

In still another aspect, the present disclosure provides a method forpreparing a light emitting diode, including: preparing an anode, a lightemitting layer, and an electron transport layer; preparing a metaltransition layer; and preparing a cathode, the cathode being made of amaterial including a transparent conductive oxide, in which the metaltransition layer is located between the electron transport layer and thecathode, and a material of the metal transition layer has a workfunction W_(F) between an LUMO of a material of the electron transportlayer and a work function W_(F) of a material of the cathode.

Optionally, the metal transition layer is in contact with the cathode,and a surface of the metal transition layer in contact with the cathodehas a roughness Rms greater than 1.0 nm, in which the roughness is aroughness measured in an AFM photograph and expressed in a calculatedroot mean square.

Optionally, the metal transition layer is made of at least one metal ofmetals Al, In, Ag, and Sn.

Optionally, the metal transition layer is made of a mixed material ofmetal tin and an oxide of tin.

Optionally, the step of preparing the metal transition layer on theelectron transport layer includes: depositing a metal transition layeron the electron transport layer by a sputtering process, a thermaldecomposition process, or an atomic layer deposition process.

Optionally, the metal transition layer has a deposition rate of 0.5 to 3Å/s, the deposition rate being expressed by a thickness of a layerformed by deposition per unit time.

Optionally, the metal transition layer is made of a mixed material ofmetal tin and an oxide of tin, and the method further includes:performing an oxygen plasma treatment on a deposited tin, to produce themetal transition layer made of tin and an oxide of tin.

Optionally, the step of preparing the metal transition layer on theelectron transport layer includes depositing metal Sn by thermallydecomposing SnH₄ adduct, and depositing a metal transition layer on theelectron transport layer.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic view showing a light emitting diode according toan embodiment of the present disclosure;

FIG. 2 is an AFM photograph of aluminum film with a thickness of 8 nmdeposited on an electron transport layer;

FIG. 3 is an AFM photograph indium film with a thickness of 8 nmdeposited on an electron transport layer;

FIG. 4 is an AFM photograph tin film with a thickness of 8 nm depositedon an electron transport layer;

FIG. 5 is an AFM photograph indium film with a thickness of 8 nmdeposited on a blank glass;

FIG. 6 is an AFM photograph tin film with thickness of 8 nm deposited ona blank glass;

FIG. 7 is a schematic cross-sectional view showing a metal transitionlayer according to an embodiment of the present disclosure;

FIG. 8 is a graph showing brightness-current efficiency relationships ofQLED-1, QLED-2 and QLED-3 according to an embodiment of the presentdisclosure with according to a control embodiment QLED-0;

FIG. 9 is a schematic view showing a light emitting diode according toanother embodiment of the present disclosure;

FIG. 10 is a schematic flow chart showing a method for preparing a lightemitting diode according to an embodiment of the present disclosure;

FIG. 11 is a schematic view showing a light emitting diode according toanother embodiment of the present disclosure.

DETAILED DESCRIPTION

In order to illustrate the purposes, technical solution and advantagesin the embodiments of the present disclosure in a clearer manner, thetechnical solutions in the embodiments of the present disclosure will bedescribed hereinafter in conjunction with the drawings in theembodiments of the present disclosure in a clear and complete manner.Obviously, the following embodiments relate to a part of, rather thanall of, the embodiments of the present disclosure. Based on thedescribed embodiments of the present disclosure, a person skilled in theart may obtain the other embodiments, which also fall within the scopeof the present disclosure.

The “metal transition layer” described in the present disclosure means atransition layer including a metal material. For example, the metaltransition layer may be composed of a metal material or a materialincluding a metal and a metal oxide. Optionally, the metal transitionlayer refers to a transition layer including a metal material having amain content of, for example, 50% or more.

In a top-emitting light emitting diode made by a solution method, anelectron transport layer (ETL) is usually made of metal oxidenanoparticles having a high refractive index, e.g., zinc oxide,magnesium zinc oxide, or the like. If the light emitting diode uses avery thin metal transparent cathode, it faces issues, such asinsufficient light transmittance and serious total reflection atinterface. If the cathode of the light emitting diode is made of acompletely transparent material (e.g., ITO, IZO, etc.), it is difficultto inject carriers since such material has a high work function (ITO is4.7 eV, IZO is 5.1 eV). Therefore, how to easily inject the carriers ofthe cathode is a problem to be solved by the related art.

An embodiment of the present disclosure provides a light emitting diode,including an anode, a light emitting layer, an electron transport layer,a cathode, and a metal transition layer located between the electrontransport layer and the cathode, the cathode including a transparentconductive oxide material, and a material of the metal transition layerhaving a work function W_(F) between an LUMO of a material of theelectron transport layer and a work function W_(F) of a material of thecathode.

An embodiment of the present disclosure may produce the followingadvantageous technical effects: in the light emitting diode of theembodiment of the present disclosure, the carrier injection of thecathode can be facilitated by providing a suitable metal transitionlayer between the electron transport layer and the cathode, that is, thework function W_(F) of the material of the metal transition layer isbetween the LUMO of the material of the electron transport layer and thework function W_(F) of the material of the cathode. This can reduce theoperating voltage applied to the light emitting diode, therebyincreasing the service life of the light emitting diode.

In an optional embodiment of the present disclosure, the light emittingdiode is a quantum dot light emitting diode, and the light emittinglayer is a quantum dot light emitting layer.

FIG. 1 is a schematic view showing a light emitting diode according toan optional embodiment of the present disclosure. The light emittingdiode 10 includes an anode 11, a quantum dot light emitting layer 12, anelectron transport layer (ETL) 13, a metal transition layer 14, and acathode 15. The cathode 15 is made of a material including a transparentconductive oxide. The metal transition layer 14 is made of a materialhaving a work function W_(F) between an LUMO of the material of theelectron transport layer and a work function W_(F) of the material ofthe cathode. For example, the material of the metal transition layer maybe at least one metal of metals Al, In, Ag, and Sn; or a mixed materialof tin and an oxide of tin. The transition layer made of the abovematerial can not only adjusts the difference in work function betweenthe transparent conductive oxide layer (i.e., the cathode) and theelectron transport layer, but also can increase the effective area ofcarrier injection of the cathode, thereby facilitating the carrierinjection of the cathode.

In an optional embodiment, when a cathode of a light emitting diode ismade of a transparent conductive oxide material such as ITO or IZO,since such material has a high work function (for example, ITO is 4.7 eVand IZO is 5.1 eV), a metal transition layer can be prepared between theelectron transport layer and the cathode to function as adjusting a workfunction. This can reduce the difficulty of carrier injection. Further,in the light emitting diode of an optional embodiment of the presentdisclosure, the surface of the metal transition layer made of the abovematerial in contact with the cathode has a relatively high surfaceroughness. The surface roughness is a roughness measured in an AFMphotograph and expressed by a calculated root mean square. Unlessotherwise specified, the roughness of the present disclosure refers tothe roughness measured and calculated according to this method.Optionally, the surface of the metal transition layer made of the abovematerial has a discontinuous island profile, and further optionally, theisland profile has a protrusion height less than or equal to 10 nm. Thisshape improves the effective area of carrier injection of the cathode,thereby facilitating the carrier injection. FIG. 7 is a cross-sectionalview along a direction perpendicular to the surface of the metaltransition layer in contact with the electron transport layer. As shownin FIG. 7 , the standard line s1 is selected such that the sum of theareas of the projections protruding outward from the metal transitionlayer is equal to the sum of the areas of the recess portions recessedinto the metal layer. The distance between the standard line s1 and thesurface of the metal transition layer in contact with the electrontransport layer is the thickness h1 of the metal transition layer, thedistance between the highest point of each protrusion portion protrudingoutward and the standard line s1 is the protrusion height h2 of theprotrusion portion, and the distance between the lowest point of eachrecess portion recessing inward and the standard line s1 is the recessheight h3 of the recess portion. The surface roughness Rms of thepresent disclosure is obtained by calculating the root mean square ofthe height h2 of all the protrusions and the depth h3 of all the recessportions.

Specifically, a metal transition layer of a QLED device is made ofmetals having similar work functions, such as aluminum (Al), indium(In), and tin (Sn). For example, a 5 to 10 nm thick metal transitionlayer is deposited on the electron transport layer by sputtering orevaporation in a vacuum deposition system at 0.5 to 3 Å/s. The workfunctions of aluminum, indium and tin are 4.3 eV, 4.1 eV and 4.4 eV,respectively. The metal transition layers made of these three metals areobserved by atomic force microscope (AFM). Referring to FIG. 2 (Al),FIG. 3 (In) and FIG. 4 (Sn), it can be found that all three metals canform a rough surface with a discontinuous island profile, and thesurface roughness of the metal transition layer is increasedsequentially in an order from aluminum, indium to tin (1.3 nm, 1.6 nm,and 2.7 nm, respectively). That is, the surface of the metal transitionlayer made of tin has a discontinuous columnar shape and a relativelyhigh roughness, and in particular, the surface of the metal transitionlayer made of metal Sn is the roughest. This result can also bedemonstrated from FIGS. 5 and 6 . FIGS. 5 and 6 show that a 5 to 10 nmthick metal transition layer is deposited on a blank glass by sputteringor evaporation in a vacuum deposition system at 0.5 to 3 Å/s, that is,FIGS. 5 and 6 merely differ from FIGS. 2 to 4 in that the substrates fordeposition are different, while other processes for deposition areidentical. As can be seen from FIGS. 5 and 6 , metals In and Sn can formrough surfaces with discontinuous island profile having a roughness of4.0 nm and 5.0 nm, respectively. The metal transition layer formed inthe present disclosure has such morphology feature, which increases theeffective area of carrier injection of the cathode, thereby facilitatingthe carrier injection.

Further, in the case where the materials, structures, and thicknesses ofother film layers are identical exactly, the light emitting diodesQLED-1, QLED-2 and QLED-3 shown in FIG. 9 having the metal transitionlayer made of metals aluminum, indium, and, as well as the lightemitting diode QLED-0 without metal transition layer are prepared,respectively. The metal transition layer was deposited by the thermaldecomposition method of the present disclosure at a deposition rate of 2Å/s. One of the constituents of the light emitting diode of the presentdisclosure is shown as follows: glass substrate/ITO (200 nm)/PEDOT: PSS(10 nm)/TFB (20 nm)/TCTA (10 nm)/ZnO (200 nm)/Sn (10 nm)/IZO (200 nm).Other devices differ from each other merely in the constituent materialof the metal transition layer. QLED-0 has no metal transition layer. TheQLED-1, QLED-2, QLED-3, and QLED-0 are powered separately, and thebrightness and current of the four devices are measured to calculate thecurrent efficiency. As shown in FIG. 8 , a luminance-current efficiencygraph of QLED-1, QLED-2, QLED-3, and QLED-0 is obtained. As can be seenfrom FIG. 8 , the luminance efficiency of QLED-1, QLED-2, and QLED-3 isimproved as compared with that of QLED-0, and in particular, the currentefficiency of QLED-3 is significantly improved. The performance testresults are consistent with the surface roughness results observed inFIGS. 2 to 4 : the roughnesses of the metal transition layers in QLED-1,QLED-2, and QLED-3 are increased sequentially. Therefore, the roughnessof the metal transition layer formed by the deposition is positivelycorrelated with the current efficiency of the QLED device.

The rough surface of the metal transition layer prepared from the abovematerials has a discontinuous island profile, and the island shape hasprotrusions with a height h2, calculated from the surface of the metaltransition layer, less than or equal to 3 nm, 4 nm, 5 nm, 8 nm, or evenless than or equal to 10 nm. The height of the protrusion depends on thethickness of the prepared metal transition layer. The discontinuousisland profile has a positive influence on the light output, so that therays of light are less susceptible to specular reflection. Moreover, theexit angles of the rays of light are different, and these rays of lightcan also form interference of light, so that the intensity of thetransmitted rays of light is high, which has a positive influence on theexit light.

In the light emitting diode of an optional embodiment of the presentdisclosure, a metal transition layer is prepared from a material havinga work function W_(F) between the LUMO of the material of the electrontransport layer and the work function W_(F) of the material of thecathode. Optionally, the material for preparing the metal transitionlayer is at least one metal of metals Al, In, Ag, and Sn; or a mixedmaterial of tin and an oxide of tin. Further optionally, the materialfor preparing the metal transition layer is: Al, In, Sn, Ag, Sn—Al orSn—Ag alloy, and oxides of tin and tin. The difference in work functionbetween the electron transport layer and the cathode can be adjusted bya metal transition layer made of these materials. Moreover, when themetal transition layer is composed of an alloy material or an oxidematerial of tin and tin, the difference in work function between theelectron transport layer and the cathode can be further adjusted byadjusting the ratio among the metals or the ratio between tin and theoxide of tin. Thus, the metal transition layer of the present disclosureimproves the efficiency of the QLED device. Optionally, the alloymaterial is tin and at least one of other metals, such as silver,aluminum, and indium. Further optionally, the atomic ratio of tin toother metals, such as silver, aluminum or indium, is from 5:1 to 1:1,and even the atomic ratio is optionally from 3:1 to 1:1. The atomicratio ultimately depends on the material of the electron transport layerand the material of the cathode, as long as the ratio is suitable foradjusting the difference in the work function between the metaltransition layer and the electron transport layer.

Optionally, the material for preparing the metal transition layer is amixture of tin and an oxide of tin. Tin has a high matching degree withthe electron transport layer, and tin oxide can improve the matchingdegree between the metal transition layer and the cathode (transparentconductive oxide). Therefore, the use of a mixture of tin and an oxideof tin can further reduce the difficulty of carrier injection. In themixture of tin and an oxide of tin, the molar content of metal tin maybe 50% or more, for example, 60%, 70%, 80% or 90%.

Optionally, the metal transition layer has a thickness of 0.5 nm to 15nm, and the metal transition layer has a relatively thin thickness,which is beneficial to enhance light transmission. Further optionally,the metal transition layer has a thickness of 3.5 nm to 15 nm, or even 5nm to 10 nm, and the surface roughness of the metal transition layer maybe 1 nm to 10 nm, even 3 nm to 10 nm, or even more from 3 nm to 8 nm.

In the discontinuous island profile formed by depositing a metaltransition layer on the electron transport layer, the island shape has aprotrusion height of less than or equal to 10 nm. Therefore, in order tobalance the light transmittance of the metal transition layer and theembedding degree of the metal transition layer into the electrontransport layer, the thickness of the metal transition layer isoptionally 5 nm to 10 nm. At this time, the metal transition layer hasstrong light transmission and the embedding degree into the electrontransport layer is high, and the effective area of carrier injection islarge, which contributes to reducing the difficulty of carrierinjection.

Optionally, the metal transition layer is formed by depositing amaterial on the electron transport layer by sputtering, thermaldecomposition or atomic layer deposition.

Optionally, the transparent conductive oxide material is ITO or IZO.

Optionally, the cathode has a layer thickness of 50 to 5000 nm.

Optionally, the electron transport layer is made of zinc oxide (ZnO).

Optionally, in some other embodiments of the present disclosure, thelight emitting diode 10 may further include a hole inject layer 16 (HIL)and a hole transport layer 17 (HTL), as shown in FIG. 9 . The holeinjection layer 16 is located between the hole transport layer 17 andthe anode 11, and the hole transport layer 17 is located between thehole injection layer 16 and the light emitting layer 12.

Optionally, the hole injection layer is made ofpoly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS).Optionally, the hole transport layer is made ofpoly(9,9-dioctylfluorene-co-N-(4-butylphenyl)diphenylamine) (TFB).

Optionally, the light emitting diode is a light emitting diode of a topemitting structure. The top emitting structure of the light emittingdiode enables narrow-band emission, thereby further enhancing the colorpurity of the emitted light.

In an embodiment of the present disclosure, the light emitting diodeincludes a metal transition layer, thereby forming a microcavity. Thecavity length of the microcavity can be adjusted as needed.Specifically, a microcavity having an adjustable cavity length can beformed by adjusting the thicknesses of the cathode, the electrontransport layer, the light emitting layer, the hole transport layer,and/or the hole injection layer. Thereby, the light distribution isregulated, thereby further positively affect the light emission.

In an optional embodiment of the present disclosure, there is alsoprovided a display substrate, including any of the above light emittingdiodes.

In an optional implementation of the present disclosure, there is alsoprovided a display device, including any of the above light emittingdiodes or any of the above display substrates. Specifically, but notlimited to the following examples, the display device may include: asubstrate, a thin film transistor array formed on the substrate, ananode located on the thin film transistor array, a hole injection layerformed on the anode, a hole transport layer formed on the hole injectionlayer, a light emitting layer formed on the hole transport layer, anelectron transport layer formed on the light emitting layer, a cathodeformed on the electron transport layer, a package cover plate arrangedabove the cathode and attached to the substrate, and a sealant frame forbonding the substrate and the package cover plate.

In an embodiment of the present disclosure, a method for preparing alight emitting diode is provided, the method including: preparing ananode, a light emitting layer, and an electron transport layer;preparing a metal transition layer, the metal transition layer beingmade of a material having a work function W_(F) between an LUMO of amaterial of the electron transport layer and a work function W_(F) of amaterial of the cathode; and preparing a cathode, the cathode being madeof a transparent conductive oxide material.

FIG. 10 shows a schematic flow chart showing a method for preparing alight emitting diode according to an embodiment of the presentdisclosure. The method includes the following steps S81 to S83.

Step S81: sequentially preparing an anode, a light emitting layer, andan electron transport layer. Specifically, the anode, the light emittinglayer, and the electron transport layer can be prepared sequentially byspin coating, coating, or the like in a dry nitrogen atmosphere.

Step S82: preparing a metal transition layer on the electron transportlayer, the metal transition layer being made of a material having a workfunction W_(F) between an LUMO of a material of the electron transportlayer and a work function W_(F) of a material of the cathode.

Step S83: preparing a cathode on the metal transition layer, the cathodebeing made of a transparent conductive oxide material.

The above preparation method is merely an example of the presentdisclosure, but is not limited to the above method for preparing thelight emitting diode of the present disclosure, and may be prepared byother methods. For example, a light emitting diode having a structure asshown in FIG. 1 can be obtained first by preparing an anode, followed bypreparing a metal light emitting layer and an electron transport layer,and then by preparing a metal transition layer, a cathode, and the like;or a light emitting diode having a structure as shown in FIG. 11 can beobtained first by preparing a cathode, followed by preparing a metaltransition layer and an electron transport layer, and then by preparinga light emitting layer, an anode, and the like.

As for the light emitting diode prepared by the preparation method ofthe embodiment of the present disclosure, the metal transition layer iscomposed of a material having a work function W_(F) between the LUMO ofthe material of the electron transport layer and the work function W_(F)of the material of the cathode, which facilitates the carrier injectionof the cathode, thereby being capable of reducing the operating voltageapplied to the light emitting diode, and further being capable ofincreasing its service life.

Optionally, the light emitting layer in step S81 is a quantum dot lightemitting layer, and the light emitting diode prepared by the preparationmethod of the embodiment of the present disclosure is a quantum dotlight emitting diode.

Optionally, the material of the metal transition layer is a metal Al,In, Ag or Sn. Moreover, the step of preparing the metal transition layeron the electron transport layer includes depositing a metal or an alloyon the electron transport layer by sputtering, thermal decomposition oratomic layer deposition, to obtain the metal transition layer made ofthe metal or the alloy. From the perspective of the efficiency of theprepared light emitting diode, a metal Sn, In or Al may be optionallyused, and even a metal Sn is more preferably used.

Optionally, when thermal decomposition method is used, tin may bedeposited by annealing SnH₄ adduct. That is, SnH₄ solution is sprayed orspin-coated on the electron transport layer. The SnH₄ solution containsthe adduct SnH₄, which is then thermally decomposed into tin and H₂, toobtain the metal transition layer made of tin. The adduct is anitrogen-containing adduct, to maintain the stability of the SnH₄solution and allow the SnH₄ to be present in solution in a liquid form,which facilitates subsequent reactions. Optionally, when atomic layerdeposition is used, the substrate can be placed in a vacuum depositionsystem to deposit 5 to 10 nm of metal Sn at a deposition rate of 0.5 to3 Å/s, for example, 1 to 2 Å/s.

Optionally, the tin-containing material is an alloy of tin and othermetals. The preparing the metal transition layer on the electrontransport layer includes depositing tin and other metals on the electrontransport layer by sputtering, thermal decomposition or atomic layerdeposition, to obtain the metal transition layer made of the alloy oftin and other metals.

For example, tin and other metals can be deposited in a co-evaporatedform, a desired ratio of metal alloy is achieved by controlling thedeposition rate of tin and other metals, and a metal transition layermade of an alloy or solid solution of tin and other metals is obtainedafter the deposition.

Optionally, the other metals include at least one of silver, aluminum,and indium. Further, metal aluminum or indium is used as the othermetal.

Optionally, the tin-containing material is a combination of tin and anoxide of tin, and the preparing the metal transition layer on theelectron transport layer includes: depositing tin on the electrontransport layer by sputtering, thermal decomposition or atomic layerdeposition, and performing an oxygen plasma treatment on the depositedtin, to produce the metal transition layer made of an oxide of tin andtin. At this time, the tin oxide in the metal transition layer canimprove the matching degree between the metal transition layer and thecathode, thereby further reducing the difficulty of carrier injection.

Optionally, the transparent conductive oxide material is ITO or IZO.Optionally, the transparent conductive oxide material layer can beprepared by sputter deposition. The parameters of the deposition processare: depositing ITO or IZO with a thickness of 50 to 500 nm under argon(Ar) at a flow rate of 10 to 100 sccm at 0.1 to 15 Pa.

Optionally, the light emitting diode of the top emission structureprepared by the above preparation method enables narrow-band emission,thereby further enhancing the color purity of the emitted light.

Optionally, the above step S81 includes sequentially preparing an anode,a hole injection layer, a hole transport layer, a light emitting layer,and an electron transport layer on the base substrate. Furtheroptionally, the anode, the hole injection layer, the hole transportlayer, the light-emitting layer, and the electron transport layer may besequentially prepared in a dry nitrogen atmosphere.

Optionally, PEDOT:PSS may be deposited on the anode to form a holeinjection layer.

Optionally, TFB may be deposited on the hole injection layer to form ahole transport layer.

Optionally, zinc oxide may be deposited on the light emitting layer toform an electron transport layer.

The light emitting diode prepared by the method for preparing the lightemitting diode of the embodiment of the present disclosure includes ametal transition layer, thereby forming a microcavity. The cavity lengthof the microcavity can be adjusted as needed. Specifically, amicrocavity having an adjustable cavity length can be formed byadjusting the thicknesses of the cathode, the electron transport layer,the light emitting layer, the hole transport layer, and/or the holeinjection layer. Thereby, the light distribution is regulated, therebyfurther positively affect the light emission.

Unless otherwise defined, technical terms or scientific terms usedherein have the normal meaning commonly understood by one skilled in theart in the field of the present disclosure. The terms “first”, “second”,and similar terms used in the description and claims of the presentdisclosure do not denote any order, quantity, or importance, but rathermerely serves to distinguish different components. The word “connected”or “connecting” and the like are not limited to physical or mechanicalconnections, but may include electrical connections, whether direct orindirect. “On”, “under”, “left”, “right” and the like are only used torepresent relative positional relationships, and when the absoluteposition of the described object is changed, the relative positionalrelationship may also be changed, accordingly.

The above description is the optional embodiment of the presentdisclosure. It should be noted that one skilled in the art would makeseveral improvements and substitutions without departing from theprinciples of the present disclosure. These improvements andmodifications should also be regarded as the protection scope of thepresent disclosure.

What is claimed is:
 1. A light emitting diode, comprising an anode, aquantum dot light emitting layer, an electron transport layer, acathode, and a transition layer located between the electron transportlayer and the cathode, wherein the cathode comprises a transparentconductive oxide material, and a material of the transition layer has awork function W_(F) between an LUMO of a material of the electrontransport layer and a work function W_(F) of a material of the cathode.2. The light emitting diode of claim 1, wherein the transition layercomprises one or more of metal oxides and metals.
 3. The light emittingdiode of claim 1, wherein a metal element of the electron transportlayer is different from a metal element of the transition layer.
 4. Thelight emitting diode of claim 1, wherein a surface of the transitionlayer proximate to the cathode has a roughness Rms greater than 1.0 nm,wherein the roughness is a roughness measured in an AFM photograph andexpressed in a calculated root mean square.
 5. The light emitting diodeof claim 4, wherein a surface of the transition layer proximate to thecathode has a roughness of 1.0 nm to 5.0 nm.
 6. The light emitting diodeof claim 1, wherein the metal element of the transition layer isselected from a group consisting of Al, In, Ag, and Sn.
 7. The lightemitting diode of claim 6, wherein the transition layer is made of metalSn, Sn—Al or Sn—Ag alloy.
 8. The light emitting diode of claim 1,wherein the transition layer is made of a mixed material of metal tinand an oxide of tin.
 9. The light emitting diode of claim 8, wherein themetal tin has a molar ratio of 50% or more in the mixed material. 10.The light emitting diode of claim 1, wherein the transition layer has athickness of 1.5 nm to 15 nm.
 11. The light emitting diode of claim 1,wherein a surface of the transition layer proximate to the cathode has adiscontinuous island profile, and the island profile has a protrudingheight less than or equal to 10 nm.
 12. A light emitting diode,comprising an anode, a quantum dot light emitting layer, a first carrierlayer, a cathode, and a second carrier layer located between the firstcarrier layer and the cathode, wherein the cathode comprises atransparent conductive oxide material, and a material of the secondcarrier layer has a work function W_(F) between an LUMO of a material ofthe first carrier layer and a work function W_(F) of a material of thecathode.
 13. The light emitting diode of claim 12, wherein the secondcarrier layer comprises one or more of metal oxides and metals.
 14. Thelight emitting diode of claim 13, wherein a metal element of the firstcarrier layer different from a metal element of the second carrierlayer.
 15. The light emitting diode of claim 12, wherein a surface ofthe second carrier layer proximate to the cathode has a roughness Rmsgreater than 1.0 nm, wherein the roughness is a roughness measured in anAFM photograph and expressed in a calculated root mean square.
 16. Thelight emitting diode of claim 15, wherein a surface of the secondcarrier layer proximate to the cathode has a roughness of 1.0 nm to 5.0nm.
 17. The light emitting diode of claim 13, wherein the metal elementof the second carrier layer is selected from a group consisting of Al,In, Ag, and Sn.
 18. The light emitting diode of claim 17, wherein thesecond carrier layer is made of metal Sn, Sn—Al or Sn—Ag alloy.
 19. Adisplay device, comprising the light emitting diode of claim
 1. 20. Adisplay device, comprising the light emitting diode of claim 12.